A structural perception about intrinsic point defects in nonstoichiometric compound semiconductors - (PPT)

摘要

Off-stoichiometric CZTS/CZTSe can be Cu-poor/Zn-rich ... Cu-rich/Zn-rich ... Cu-poor/Zn-poor ... Cu-rich/Zn-rich V_(Cu) + Zn_(Cu) Zn_(Sn)+2Cu_i Sn_(Zn) + 2Cu_(Zn) Sn_(Zn)+ 2V_(Cu) Zn_(Sn) + 2Zn_(Cu) Cu_(Sn) + Cu_i + Zn_i Cu_(Zn) + Cu_i Sn_(Cu) + V_(Cu) + V_(Zn) in coexistence with detrimental secondary phases (e. g. ZnS or ZnSe). demonstrated the ability of the CZTS/CZTSe phase to tolerate large deviations from stoichiometric composition without collaps of the kesterite structure It is possible to predict the occuring point defects from the cation ratios Cu/(Zn+Sn) and Zn/Sn of the kesterite phase Growth of homogeneous Cu-poor/Zn-rich CZTS/CZTSe thin films (insted a mixture of different off-stoichiometric kesterite phases) is a challenge but one key to higher efficiencies!