BMDO-AASERT: Group III Nitride Semiconductor Nanostructure Research MOCVD Growth and Novel Characterizations of High Temperature, High Carrier Density and Microcrack Lasing Effects

摘要

This project provided training for graduate students in a wide variety of areas related to III-nitride research: epitaxial growth using MOCVD and MBE, optical and electrical characterization, post-growth processing and device fabrication. This training program was unique in that it exposed students to nearly all aspects of critical III-nitride technology through this comprehensive training.