Development of III-nitride nanostructures for low threshold lasing and semipolar GaN towards Yellow/Orange lasing

摘要

Summary form only given. The paper demonstrates a number of InGaN/GaN based single microdisk lasers with low threshold lasing optically pumped in a cw mode at room temperature. The emission wavelength ranges from the blue to true green spectral region. Monolithic dual-color lasing with a low threshold has also been demonstrated, where the single micro-disk is fabricated on an InGaN based MQW structure containing two kinds of InGaN MQWs with one emitting blue emission and another emitting green-yellow emission. Finally, the paper explores a possibility to develop even longer emission wavelength such as yellow and orange laser diodes by proposing the utilization of semi-polar GaN.