Photoresist Removal in LAPPS

摘要

The ability of LAPPS to remove standard semiconductor photoresist (PR) was studied. Both material removal rates ('ashing') and anisotropy ('etching') were determined with respect to various conditions, including gas composition, substrate temperature, plasma duty factor, and substrate RF-induced self-bias level. At room temperature, the removal rate increased linearly with substrate bias, with reasonable anisotropic pattern transfer improving above -50 V self-bias. Little change in material removal was seen as gas composition went from pare oxygen to 80% argon, implying the PR removal mechanism in LAPPS was ion-driven, or more specifically ion-energy driven. Construction and modification details of the equipment and diagnostics used in these experiments are given in detail.