Photoresist removal for composition, method of manufacture photoresist removal for composition, photoresist removal method of using a photo resist removal for composition, and a method of manufacturing a semiconductor device

摘要

PROBLEM TO BE SOLVED: To provide a composition for stripping a photoresist, the composition that can selectively stripping a photoresist and an etching residue while minimizing damages in metal wires and an oxide film.;SOLUTION: The composition for stripping a photoresist contains an alcohol amide compound expressed by structural formula 1 by 5 to 20 mass%, a polar aprotic solvent by 15 to 60 mass%, an additive by 0.1 to 6 mass% and water. By using the above composition, not only a photoresist and a fine etching residue can be effectively removed but damages on a metal wire exposed upon stripping the photoresist can be minimized. In structural formula 1, R₁ represents a hydroxyl group or a hydroxyalkyl group, and R₂ represents hydrogen or a hydroxyalkyl group.;COPYRIGHT: (C)2007,JPO&INPIT