Photoresist copolymer for and method of manufacturing the same, photoresist composition, photo-resist pattern forming method, and semiconductor device

摘要

The present invention provides photoresist polymers and photoresist compositions comprising the same. The photoresist polymer is represented by the following Chemical Formula 5. Photoresist compositions containing the polymers of the present invention have superior transmittance at 157 nm wavelength, etching resistance, heat resistance, and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in 2.38 wt % aqueous TMAH solution, and are therefore suitable for lithography processes using a 157 nm wavelength-light source for fabricating a minute circuit of a high integration semiconductor device:wherein R, R*, X, Y, V, W, i, j, w, x, y and z are as described herein.