MONOMER FOR PHOTORESIST AND ITS MANUFACTURE, COPOLYMER FOR PHOTORESIST AND ITS MANUFACTURE, PHOTORESIST COMPOSITION, FORMING METHOD FOR PHOTORESIST PATTERN, AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a photoresist composition including a copolymer for photoresist usable in far ultraviolet ray region, excellent in post exposure delay stability. SOLUTION: This photoresist composition includes a polymer having a monomer expressed by formula (1) (Z1, Z2, R1, R2, R3, R4, R5 and Z and p are each described in the description), has an excellent resistance to etching and thermal resistance and capable of remarkably improving stability in far ultraviolet ray region, especially post exposure delay stability to resist for ArF.