MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates

摘要

This report results from a contract tasking Radboud University Nijmegen as follows: The Grantee will investigate the removal of dislocations from the GaN epitaxial layer by defect-selective etching technique and comparing properties of the as-grown (i.e. containing dislocations) and dislocation-free material. This approach will allow electrical or optical measurements on the epitaxial layers with and without dislocations. The influence of dislocations on the measured material properties will also be assessed.