Observation of One-Electron Charge in an Enhancement-Mode InAs Single- Electron Transistor at 4.2 K

摘要

We demonstrate experimentally single-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. The data indicate a 15 meV Coulomb charging energy and a 20 meV orbital energy spacing, which imply a quantum dot of 20 nm in diameter. Combining with the inherent advantage of a large electron g* factor in InAs, our demonstration is significant for a solid state implementation of a scalable quantum computing.