Charge-collection characteristics of low-power ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors (HEMTs)

摘要

Time-resolved charge-collection measurements are performed on AlSb/InAs HEMTs with pulsed laser excitation as a function of device bias conditions and the incident laser pulse energy. The results provide clear evidence for the presence of charge-enhancement processes that, in many ways, are analogous to those observed previously for GaAs FET technology.