Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics

摘要

Metamorphic high electron mobility transistors (HEMT) on GaAs substrates, with InAs channels and 0.1-/spl mu/m metal gates, have demonstrated 5 to 10 times lower power dissipation for equivalent f/sub T/ over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs. Our AlSb/InAs HEMT's exhibit transconductances higher than 1S/mm at drain biases as low as 0.2 V, while maintaining measured f/sub T/ results greater than 200 GHz and f/sub MAX/ results approaching 200 GHz. We have achieved low power X-band MMIC low-noise amplifiers with greater than 7 dB/stage peak gain from 12-14 GHz and 6 mW/stage DC power dissipation.