INAS/ALSB/GASB based type-II SL pin detector with P on N and N on P configurations

摘要

Novel N-structured In As/Al Sb(Al Ga Sb)/Ga Sb based type-II SL pin detector with p on n and n on p configurations are given to detect light in the Mid Wavelength Infrared Range—MWIR with a cut-off wavelength of 5 μm. Better carrier confinements are performed by placing AlSb layers switching from InAs layers to Ga Sb layers successively in the growth direction throughout the SL pin diode where zero bias detectivity is improved as 6×10¹³ A/Hz^1/2 at a wavelength of 4.2 μm at 79K. RoA value is measured as 1.8×10⁶ Ωcm² which is better than nBn devices. Dark current density is also obtained in the range of 4-7×10⁻⁷ A/cm at zero bias and Vb=0.3V respectively at 79K.