Photovoltaic detector based on type Ⅱ p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range

摘要

Mid-infrared photovoltaic detector (PD) designed on the base of a type Ⅱ p-InAs/p-GaSb asymmetric heterostructure with a deep AlSb/InAsSb/AlSb quantum well (QW) at the interface is reported. The heterostructures containing the single QW were grown by LP-MOVPE. Transport, electroluminescent and photoelectrical properties of these structures were investigated. Intense both positive and negative electroluminescence was observed in the spectral range 3-4 μm above room temperature (300-400 K). Spectral response in the mid-infrared range 1.2-3.6 μm was obtained at temperatures T=77-300 K. High quantum efficiency η=0.6-0.7 responsivity S_λ=1.4-1.7 AAV and detectivity D_λ~*=3.5×10~(11) cm Hz~(1/2)w~(-1) were achieved at 77 K. Such QW PDs are suitable for heterodyne spectroscopy and free space communication using quantum cascade lasers as well as for gas analysis and ecological monitoring applications.