Photovoltaic detector based on type IIp-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a singlequantum well for mid-infrared spectral range

摘要

Mid-infrared photovoltaic detector (PD) designed on the base of a type II p-InAs/p-GaSb asymmetric heterostructurewith a deep AlSb/InAsSb/AlSb quantum well (QW) at the interface is reported. The heterostructures containing thesingle QW were grown by LP-MOVPE. Transport, electroluminescent and photoelectrical properties of these structureswere investigated. Intense both positive and negative electroluminescence was observed in the spectral range 3-4 pmabove room temperature (300-400 K). Spectral response in the mid-infrared range 1.2-3.6 pm was obtained attemperatures T=77-300 K. High quantum efficiency η=0.6-0.7 responsivity S_λ=1.4-1.7 A/W and detectivityD_λ~*=3.5 ×10~(11) cm Hz~(1/2)w~(-1) were achieved at 77 K. Such QW PDs are suitable for heterodyne spectroscopy and freespace communication using quantum cascade lasers as well as for gas analysis and ecological monitoring applications.