机译:具有离子注入技术的真正平面InAs / AlSb HEMT,适用于低功率低温应用
Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-41296 Goeteborg, Sweden;
Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-41296 Goeteborg, Sweden;
Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-41296 Goeteborg, Sweden;
Department of Microelectronics and Applied Physics. Royal Institute of Technology (KTH), SE-16440 Kista, Sweden;
Institute of Electronics, Microelectronics and Nanotechnology, IEMN/CNRS UMR 8520, University of Lille, Av. Poincare, 59652 Villeneuve d'Ascq, France;
Institute of Electronics, Microelectronics and Nanotechnology, IEMN/CNRS UMR 8520, University of Lille, Av. Poincare, 59652 Villeneuve d'Ascq, France;
Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-41296 Goeteborg, Sweden;
InAs/AISb high electron mobility transistor; (HEMT); ion implantation; cryogenic; low-power; MMICs;
机译:超低功率应用的低温InAs / AlSb HEMT宽带低噪声中频放大器
机译:低功耗W波段CPWG InAs / AlSb HEMT低噪声放大器
机译:低功率超高速变质AlSb / InAs高电子迁移率晶体管(HEMT)的电荷收集特性
机译:InAs / AlSb HEMT混合LNA的低温操作
机译:适用于高速低功耗逻辑应用的非平面3D iii-v MOSFET
机译:用于超低功耗低噪声应用的100MTnm AlSb / InAs HEMT
机译:100 NM ALSB / INAS HEMT用于超低功耗,低噪声应用
机译:低温下Inas / alsb HEmT的直流特性