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机译:InAs / AISb高电子迁移率晶体管中可恢复的退化:AlSb中热载流子和亚稳缺陷的作用
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA;
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville,Tennessee 37235, USA;
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville,Tennessee 37235, USA;
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville,Tennessee 37235, USA;
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville,Tennessee 37235, USA;
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA ,Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;
机译:低功率超高速变质AlSb / InAs高电子迁移率晶体管(HEMT)的电荷收集特性
机译:Ir和Ti基肖特基栅极AlSb / InAs高电子迁移率晶体管的器件特性
机译:In-AlSb HEMTs在热载流子应力下的降解
机译:具有低导通电压,窄基极和低基极电阻的AISb-InAs-AlSb P-n-P晶体管
机译:选择性接触双沟道高电子迁移率场效应晶体管的制作与分析
机译:钝化AlGaN / GaN高电子移动晶体管的大信号线性和高频噪声
机译:偏压条件在alGaN / GaN高电子迁移率晶体管热载流子退化中的作用
机译:Inas / Gasb / alsb材料系统中谐振带间隧穿二极管和高电子迁移率晶体管的单片集成;杂志文章