Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors

摘要

The impacts of gate bias and device temperature on carrier energy distributions are reported for AlGaN/GaN High Electron Mobility Transistors. The lateral electric field and the average carrier energy are the highest at the end of gate on the gate‐drain access side. The number of high energy carriers is the greatest in the semi‐ON operating condition, with maximum energies exceeding the activation energy of defects in the AlGaN. There is a significant decrease in the number of very high energy carriers (greater than 2 eV) as the device temperature increases whereas the number of moderately energetic carriers (between 1 to 2 eV) is higher at elevated temperatures.(© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)