Study on Wide-gap Gallium-nitride Based Films and Their Quantum-dots Devices

摘要

Wide-gap III-Nitride based white light emission had been proven to yield luminescence efficiency (20-30 Lumen/W) and the III-Nitride devices proved long lifetime (>10khr). It is expected that high efficiency III-Nitride based white light emission will be the major lighting source for daily illumination in the coming decades. In 1998, the world energy consumption of energy is 69,000 TWh. There had been 2300 TWh consumption in illumination with rather inefficiently way. To further largely improve the luminescence efficiency beyond 100 Lumen/W and to increase thermal stability of the III- Nitride based LED, devices in the quantum structure is the viable way to pursuit.