Electronic equipment; Semiconductor devices; High electron mobility transistors; Gallium nitrides; Thermal properties; Computer programs; Computerized simulation; High power; Theses; Test equipment; Electrical properties; Handling; Power; Communication and radio systems; Operation; Broadband; Silicon; Limitations; Thermal analysis; Sapphire; High voltage; Silicon carbides; Surveillance; Radar; Substrates; Energy gaps; High frequency; Military requirements; Materials; Military equipment;
机译:ALXGA1 XN后屏对六英寸MCZ Si衬底上的AlGaN / GaN高电子迁移率晶体管(HEMT)的影响
机译:N面GaN / AlN / GaN / InAlN和GaN / AlN / AlGaN / GaN / InAlN高电子迁移率晶体管结构,通过等离子体辅助分子束外延在邻近衬底上生长
机译:100 keV质子辐照对AlGaN / GaN高电子迁移率晶体管(HEMT)的电子和光学性能的影响
机译:在真正散装半绝缘GaN基板上制造微波AlGaN / GaN高电子移动晶体管(HEMTS)
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:0.1μmAlGaN / GaN高电子迁移率晶体管(HEMT)工艺的改进大信号模型及其在W波段实用单片微波集成电路(MMIC)设计中的应用
机译:在金刚石基底上开发AlGaN / GaN高电子迁移率晶体管(HEMT)