Strained GaSb/AlAsSb Quantum Wells for p-Channel Field-Effect Transistors

摘要

Quantum wells of GaSb were grown by molecular beam epitaxy on GaAs substrates. The buffer layer and barrier layers consisted of relaxed AlAsxSb1 x. The composition of the AlAsxSb1 x was varied to produce compressive biaxial strains in the GaSb. The confinement and strain in the GaSb quantum wells lift the degeneracy in the valence band, resulting in lower in-plane effective mass and higher mobility. A threefold enhancement of mobility was achieved, with room-temperature mobilities as high as 1350cm2/V s and 77K values as high as 10, 400 cm2/V s for strains near 1%. These quantum wells should be suitable for high-performance p-channel field-effect transistors for complementary circuits operating at extremely low power.