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N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits
N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits
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机译:用于互补电路的具有单个量子阱的N沟道和P沟道场效应晶体管
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摘要
A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.
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机译:其中单个In x Sub> Ga 1-x Sub> Sb量子阱的互补金属氧化物半导体(CMOS)器件既可以用作n通道,也可以用作p通道。相同的设备及其制造方法。 In x Sub> Ga 1-x Sub> Sb层是包含Te-delta掺杂的Al y Sub> Ga 1-的异质结构的一部分y Sub> Sb层在结构的一部分上的In x Sub> Ga 1-x Sub> Sb层上方。可以通过使用适当的源极,栅极将不含Te-delta掺杂的Al y Sub> Ga 1-y Sub> Sb势垒层的结构部分制成p-FET。 ,漏极端子以及保留Te-delta掺杂的Al y Sub> Ga 1-y Sub> Sb层的结构部分可以制成n-FET,从而该结构形成CMOS器件,其中单个In x Sub> Ga 1-x Sub> Sb量子阱用作n-FET部分和p-FET部分的传输通道异质结构。
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