Study of Spin Splitting in GaN/AlGaN Quantum Wells

摘要

In the past year, the electronic properties of device-quality InGaN/GaN and AlGaN/GaN quantum wells were investigated by optical and transport measurements. Spin splitting of two-dimensional electron gas in GaN/AlxGa1-xN heterostructures were studied in detail. The result of the investigation can be separated into two parts. One is the study of HEMT made of AlGaN/GaN heterostructures, from the sample growth (by MBE) to the device process (by FIB), to investigate the spintronic device proposed. The other one is the study of GaN nanostructure, for example: GaN nanopillars, pyramids, and disks, grown on LiAlO2 substrate by MBE. All of these results have been published in international journals.