Cadmium selenides; Mercury cadmium tellurides; Infrared detectors; Transmission electron microscopy; Molecular beam epitaxy; Microstructure; Grain boundary; Thin films; Substrates; Band gaps; Crystal lattices; Passivation (metallurgy); Surfaces; Photodiodes; Liquid phase epitaxy; Layers; Hgcdte (mercury cadmium tellurides); Hgcdse (mercury cadmium selenides); Tem (transmission electron microscopy); Mbe (molecular beam epitaxy); Hwe (hot-wall epitaxy); Lattice constant; Optical coefficient; Surface passivation; Lpe (liquid phase epitaxy); Heterostructures;
机译:在GaSb(211)B衬底上MBE生长的HgCdSe红外材料的综述
机译:第三代HGCDTE红外焦平面阵列光电探测器的蚀刻诱导损伤的结位光电子表征
机译:红外材料的红外光致发光成像:HgCdTe / Cd(Zn)Te异质结构
机译:激光束感应电流(LBIC)空间成像作为红外HgCdTe材料和器件的表征工具
机译:用于第三代红外探测器的HgCdTe及其相关材料的表征
机译:聚合物基远红外复合材料的加工与表征
机译:基于MEMS的红外微分光计集成在HGCDTE检测器上的材料和过程