Manufacturing Methods for Chrome Silicon Film Resistors for Radiation Hardened Circuits

摘要

The principal objective of this program was to advance the processes and techniques that are necessary to add chrome-silicon thin film resistors to radiation hardened, low power integrated circuits. The applicability and repeatability of the resistor deposition techniques using AC sputtered chromium silicide on oxidized silicon were suitable for high volume production. The following two low power, radiation hardened transistor-transistor logic circuits were fabricated in moderate quantities to demonstrate production readiness of the AC sputtering of thin film resistors for their use in the manufacture of radiation hardened integrated circuits. (1) Dual 3-Input Nand Gate (2) Dual D Type Flip-Flop which includes at least five resistors that have resistance value equal to or greater than 40,000 ohms. With the successful completion in fabricating six hundred pieces of each device type and the results of severe military environmental tests on these devices, the contract objectives were satisfied. Some of the technological areas enhanced as a result of the program included development of AC sputtered chrome silicon thin film process techniques with the following characteristics: Sheet resistivity of 300 to 10K ohm per square, Nominal resistor thickness of 200-300A, Stability equal to or greater than nichrome resistors, and Resistor linewidth of 0.5 mil or less. (Author)