Improved CVD Techniques for Depositing Passivation Layers of ICs

摘要

This report describes the results of studies to increase the understanding of the requirements for successful glass passivation, by chemical vapor deposition (CVD), of metallized silicon planar integrated circuits (ICs) to improve both performance and reliability. The effects of various conditions for low-temperature (350 to 450 C) CVD of phosphosilicate glass (PSG) layers by oxidation of silane plus phosphine were correlated with the physical and chemical properties of deposited films. It is concluded that the important conditions to control are substrate temperature of deposition, oxygen-to-hydride ratio, hydride input, silane-to-phosphine ratio, and nitrogen input.