Efficient silicon nitride SiNx:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Lelièvre Jean‐Fran?ois; Kafle Bishal; Saint‐Cast Pierre; Brunet Paul; Magnan Romain; Hernandez Emmanuel; Pouliquen Sylvain; Massines Fran?oise

摘要

Abstract > This work demonstrates the efficient optical and passivation properties provided by hydrogenated silicon nitride (SiN <sub>x</sub> :H) layers deposited in a lab‐scale atmospheric pressure plasma enhanced chemical vapor deposition (AP‐PECVD) reactor. By applying modulated low‐frequency plasma (200?kHz), homogeneous SiN <sub>x</sub> :H layers, with small variances in thickness w and refractive index n (Δ w ?≤?2?nm; Δ n ?≤?0.02), were achieved on a surface area of 45?×?55?mm 2 . The use of voltage amplitude modulation enabled discharge optimization and led to greatly enhanced SiN <sub>x</sub> :H film homogeneity and conformity in comparison with continuous plasma discharge conditions. Additionally, AP‐PECVD SiN <sub>x</sub> :H showed good thermal stability (Δ w ?≤?1?nm; Δ n ?≤??0.02) with low absorption coefficients (k?≤?0.1 at 275?nm), demonstrating that such layers could act as efficient antireflective coatings. Furthermore, outstanding surface passivation properties were achieved after firing, both on n‐type FZ c‐Si substrates of standard 2.8?Ω.cm doping ( τ <sub>eff</sub> ?=?1.45?ms) and on highly doped 85?Ω/sq n + emitters ( j <sub>0e</sub> ?=?74?±?2 fA.cm ?2 ). Finally, AP‐PECVD SiN <sub>x</sub> :H thin films were tested on industrial passivated emitter and rear solar cell (PERC) architectures, where the potential of applying these layers both as efficient rear‐side capping layer and front‐side antireflective coating was demonstrated. The first lab‐scale 40?×?40?mm 2 PERC solar cells featuring AP‐PECVD SiN <sub>x</sub> :H layers led to conversion efficiencies of up to 20.6%. These results pave the way for upscaling the dielectric barrier discharge lab‐scale reactor in an industrial in‐line process, which could provide low‐cost and high‐throughput SiN <sub>x</sub> :H capping and antireflective layers. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> > 该工作证明了氢化氮化硅提供的有效光学和钝化性能（SIN <sub> x </ sub> ：H）层沉积在实验室规模的大气压等离子体增强型化学气相沉积（AP-PECVD）反应器中。通过施加调制的低频等离子体（200？kHz），均匀仙 <sub> x </ sub> ：H层，厚度小差异 w </ i> 和折射率 n </ i> （δ. w </ i> ？≤？2？nm; δ. n </ i> ？≤≤0.02），在45Ω×55？55Ω·55Ω 2 </ sup> 。使用电压幅度调制使能放电优化并导致大大增强的SIN <sub> x </ sub> ：H膜均匀性和符合性，与连续等离子体放电条件相比。此外，AP-PECVD SIN <sub> x </ sub> ：H显示出良好的热稳定性（δ w </ i> ？≤α1？nm; δ. n </ i> ≤≤0.02），低吸收系数（k？≤≤0.1，在275Ω·nm），证明这种层可以用作有效的抗反射涂层。此外，在标准2.8Ω·C-Si基板上烧制后实现了出色的表面钝化性能。标准2.8Ω.cm掺杂（ τ</ i> <sub> eff </ sub> ？=？1.45？ms）和高度掺杂的85？ω/ sq n + </ sup> 发射者（ j </ i> <sub> 0e </ sub> ？=？74？±2 fa.cm ？2 </ sup> ）。最后，AP-PECVD SIN <sub> x </ sub> ：H薄膜在工业钝化的发射极和后太阳能电池（PERC）架构上进行测试，其中证实了作为高效后侧覆盖层和前侧抗反射涂层施加这些层的电位。第一个实验室规模40？×40？mm 2 </ sup> Perc太阳能电池具有AP-PECVD SIN <sub> x </ sub> ：H层导致转换效率高达20.6％。这些结果铺平了在工业在线过程中提升介质阻挡放电实验室反应器的方法，这可以提供低成本和高通量的罪 <sub> x </ sub> ：H封盖和抗反射层。 </ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-29870/'>《Progress in photovoltaics》</a> <b style="margin: 0 2px;">|</b><span>2019年第11期</span><b style="margin: 0 2px;">|</b><span>共13页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lelièvre Jean‐Fran?ois&option=202" target="_blank" rel="nofollow">Lelièvre Jean‐Fran?ois;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kafle Bishal&option=202" target="_blank" rel="nofollow">Kafle Bishal;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Saint‐Cast Pierre&option=202" target="_blank" rel="nofollow">Saint‐Cast Pierre;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Brunet Paul&option=202" target="_blank" rel="nofollow">Brunet Paul;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Magnan Romain&option=202" target="_blank" rel="nofollow">Magnan Romain;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Hernandez Emmanuel&option=202" target="_blank" rel="nofollow">Hernandez Emmanuel;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Pouliquen Sylvain&option=202" target="_blank" rel="nofollow">Pouliquen Sylvain;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Massines Fran?oise&option=202" target="_blank" rel="nofollow">Massines Fran?oise;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>PROMES CNRSUPR 8521 Tecnosud Rambla de la thermodynamique 66100 Perpignan France;</p> <p>Fraunhofer Institute for Solar Energy SystemsHeidenhofstrasse 2 79110 Freiburg Germany;</p> <p>Fraunhofer Institute for Solar Energy SystemsHeidenhofstrasse 2 79110 Freiburg Germany;</p> <p>PROMES CNRSUPR 8521 Tecnosud Rambla de la thermodynamique 66100 Perpignan France;</p> <p>PROMES CNRSUPR 8521 Tecnosud Rambla de la thermodynamique 66100 Perpignan France;</p> <p>PROMES CNRSUPR 8521 Tecnosud Rambla de la thermodynamique 66100 Perpignan France;</p> <p>Air LiquideParis‐Saclay Research Center1 chemin du bas de la porte des Loges 78350 Jouy en Josas France;</p> <p>PROMES CNRSUPR 8521 Tecnosud Rambla de la thermodynamique 66100 Perpignan France;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/7667.html" title="通信系统（传输系统）">通信系统（传输系统）;</a><a href="https://www.zhangqiaokeyan.com/clc/1790.html" title="光电子技术、激光技术">光电子技术、激光技术;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=antireflective coating&option=203" rel="nofollow">antireflective coating;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=atmospheric pressure PECVD&option=203" rel="nofollow">atmospheric pressure PECVD;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=hydrogenated silicon nitride SiN x :H&option=203" rel="nofollow">hydrogenated silicon nitride SiN x :H;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=passivation layer&option=203" rel="nofollow">passivation layer;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=PERC solar cells&option=203" rel="nofollow">PERC solar cells;</a> </p> <div class="translation"> 机译：抗反射涂层;大气压PECVD;氢化氮化硅SIN X：H;钝化层;PERC太阳能电池; </div> </li> </ul> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 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S. </a> <span>1998</span> </span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：通过快速热氧化物/ pECVD氮化硅叠层有效钝化低电阻率硅表面及其在钝化后部和双面si太阳能电池中的应用</span> </p> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/academic-journal-cn_practical-electronics_thesis/0201235349161.html">多晶硅太阳能电池PECVD四层氮化硅减反射膜工艺</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=韩锦明&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 韩锦明</a> <span> <a href="/journal-cn-8725/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 电子制作 </a> </span> <span> . 2017</span><span>,第024期</span> </span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/academic-journal-cn_science-wealth_thesis/020123048790.html">基于PECVD法沉积氮氧化硅/氮化硅叠层背钝化膜的商用高效P型单晶硅太阳电池</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王恩宇&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 王恩宇</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=郭卫&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,郭卫</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王艳波&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,王艳波</a> <span> <a href="/journal-cn-2665/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 科学与财富 </a> </span> <span> . 2015</span><span>,第011期</span> </span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/academic-journal-cn_journal-zaozhuang-university_thesis/0201234563361.html">适用于晶体硅太阳能电池的HF/LF-PECVD SiNx:H薄膜的特性研究</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=李振华&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 李振华</a> <span> <a href="/journal-cn-3849/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 枣庄学院学报 </a> </span> <span> . 2013</span><span>,第002期</span> </span> </div> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/academic-journal-cn_solar-energy_thesis/0201281809426.html">低频PECVD设备沉积的AlOx/SiNx钝化膜的性能研究</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=赵增超&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 赵增超</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=李明&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,李明</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=周小荣&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,周小荣</a> <span> <a href="/journal-cn-8416/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 太阳能 </a> </span> <span> . 2020</span><span>,第006期</span> </span> </div> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/academic-journal-cn_new-technology-process_thesis/0201213115035.html">晶体硅太阳能电池PECVD SiNx:H薄膜工艺研究</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=刘丽琴&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 刘丽琴</a> <span> <a href="/journal-cn-7697/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 新技术新工艺 </a> </span> <span> . 2009</span><span>,第012期</span> </span> </div> </li> <li> <div> <b>6. </b><a class="enjiyixqcontent" href="/academic-conference-cn_meeting-23907_thesis/020221005164.html">氢辅助PECVD法沉积氮化硅薄膜的钝化效果研究</a> <b>[C]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=陈涛&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 陈涛</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=席珍强&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,席珍强</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=汪雷&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,汪雷</a> <span> <a href="/conference-cn-23907/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 第九届中国太阳能光伏会议 </a> <span> <span> . 2006</span> </span> </div> </li> <li> <div> <b>7. </b><a class="enjiyixqcontent" href="/academic-degree-domestic_mphd_thesis/020314265022.html">PECVD-SiNx钝化减反射特性研究</a> <b>[A] </b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=汪建强&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 汪建强</a> <span> . 2008</span> </span> </div> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/patent-detail/06120104174375.html">用于使沉积在透明基底上的抗反射处理层硬化的方法及包括硬化的抗反射处理层的透明基底</a> <b>[P]</b> . <span> 中国专利： CN111542642A </span> <span> . 2020-08-14</span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/patent-detail/061203750723.html">一种管式PECVD沉积氮化硅叠层减反射膜工艺</a> <b>[P]</b> . <span> 中国专利： CN108695408B </span> <span> . 2020.05.19</span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/patent-detail/06130411470779.html">METHOD FOR FABRICATING TANDEM SOLAR CELL WITH THIN FILM SILICON AND BULK CRYSTALLINE SILICON USING SILICON THIN FILM TUNNEL JUNCTION LAYER BY PECVD AND SOLAR CELL THEREOF</a> <b>[P]</b> . <span> 外国专利：  KR20160086155A </span> <span> . 2016-07-19</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：硅薄膜隧道结层通过PECVD及其薄膜电池制备薄膜硅和块状结晶硅串联太阳能电池的方法 </span> </p> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/patent-detail/06130411336363.html">Method for fabricating tandem solar cell with thin film silicon and bulk crystalline silicon using silicon thin film tunnel junction layer by PECVD and solar cell thereof</a> <b>[P]</b> . <span> 外国专利：  KR101673241B1 </span> <span> . 2016-11-07</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：通过PECVD使用硅薄膜隧道结层制造具有薄膜硅和块状晶体硅的串联太阳能电池的方法及其太阳能电池 </span> </p> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/patent-detail/06130461334479.html">Storage cell capacitors prodn. for DRAM technology - by forming capacitor electrode contact hole, depositing doped poly-silicon@ layer, depositing silicon nitride, poly-silicon@ and silica layers, etching,etc.</a> <b>[P]</b> . <span> 外国专利：  DE4237100A1 </span> <span> . 1993-05-13</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：蓄电池电容器产品用于DRAM技术-通过形成电容器电极接触孔，沉积掺杂的多晶硅层，沉积氮化硅，多晶硅和二氧化硅层，蚀刻等。 </span> </p> </li> </ul> </div> </div> </div> <div class="theme 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