Method for fabricating tandem solar cell with thin film silicon and bulk crystalline silicon using silicon thin film tunnel junction layer by PECVD and solar cell thereof

摘要

The present invention relates to a silicon thin film tunnel junction formed by a plasma chemical vapor deposition method capable of improving the efficiency of a solar cell by forming a tunnel junction layer having a nanocrystalline structure by using a chemical vapor deposition method between a bulk crystalline solar cell and a thin film solar cell Layer crystalline silicon and a solar cell using the same. For example, a bulk crystalline solar cell forming a bulk crystalline solar cell, which is a bottom cell, A tunnel junction layer forming step of forming a tunnel junction layer made of a silicon thin film on the bulk crystalline solar cell; And forming a thin film solar cell, which is an upper cell, on the tunnel junction layer, wherein the tunnel junction layer electrically connects the crystalline solar cell and the thin film solar cell by a tunneling effect, Wherein the tunnel junction layer is formed by a plasma chemical vapor deposition method and a solar cell according to the method.