Hydrogenated amorphous silicon film as intrinsic passivation layer deposited at various temperatures using RF remote-PECVD technique

摘要

Hydrogenated amorphous silicon (a-SrH) thin films as passivation layer are deposited at various substrate temperatures using the remote-plasma-enhanced chemical vapor deposition method Then properties are investigated and a method for further improvement is explored The highest effective carrier lifetime as 850 mu s is obtained at optimal deposition temperature of 250 degrees C Moreover, the further improvement is found after thermal annealing treatment at 250 degrees C for 20 s A combination of the optimal deposition conditions for a-Si H film and annealing treatment provides excellent surface and bulk passivation.