Effect of Minority-Carrier Injection on Schottky-Barrier Heights that Approach the Semiconductor Band Gap.

摘要

A guideline for interpretation of capacitive and photothreshold Schottky-barrier energies has been set forth for metal-semiconductor systems which have barrier energies approaching or exceeding the band gap energy. For such systems the measured apparent barrier energies are always less than the true barrier energy if minority-carrier injection controls the incremental field at the interface. For very strong inversion the apparent barrier energy reaches a maximum value independent of the true degree of inversion. However, when the electric field penetration into the metal dominates over the effect of minority-carrier injection, the capacitively measured apparent barrier energies are greater than the true barrier energy and can be greater than the band gap energy without true surface inversion.