Preparation and Properties of Thin Film Ga(x) In(1-x) As and GaAs(x) Sb(1-x) Alloy Films.

摘要

Epitaxial alloy films were grown from solutions using three versions of the growth reactor. An effort was made to closely monitor the reducing quality of the H2 atmosphere in the reactor. Failure to grow suitably thin films is attributed to the inadequate quality of this atmosphere. (Author)