ULTRA-WIDE BAND GAP ME_XSN_1-XO₂ ALLOY SEMICONDUCTOR EPITAXIAL THIN FILM MATERIAL AND PREPARATION METHOD THEREFOR, APPLICATION THEREOF AND DEVICE THEREOF

摘要

An ultra-wide band gap Me_xSn_1-xO₂ alloy semiconductor epitaxial thin film material, comprising SnO₂ and MeO₂, wherein: x is greater than 0 and less than 1; Me is Zr or Hf or Si or a combination of any two or three among the foregoing. Also disclosed are a preparation method for and application of the described thin film material, as well as a deep ultraviolet light detector using the described thin film material as a matrix material layer.