Preparation and Optical Energy Gap of Epitaxial Films of InAs(1-x)P(x) Alloys.

摘要

Fast,sensitive infrared detectors operating in the visible to 3micrometers range are required by the Air Force for use in ranging,communication,illumination,and target designation systems. The InAs(1-x)P(x) alloy system is an attractive candidate for fulfilling these needs,since it has the potential for use in the preparation of intrinsic infrared detectors with precisely determined peak response wavelengths over the entire range from 0.92to 3.5micrometers. This is accomplished by variation of the composition of the alloy,which is accompanied by a corresponding variation in the optical energy gap. Films of InAs,InP and several alloys,InAs(1-x)P(x),where x ranged from 0.034to 0.774,were deposited by vapor phase epitaxy onto GaAs substrates. The fundamental absorption edge of each compound was measured. The temperature coefficient of the energy gap was also evaluated as a function of composition. (Modified author abstract)