OPTICAL DEVICES UTILIZING SINGLE CRYSTAL GaP OR GaAs FILMS EPITAXIALLY GROWN ON CaF{11 {11 SUBSTRATES AND METHOD OF FABRICATING SAME

摘要

Single Crystal GaP or GaAs films are epitaxially grown on CaF2 substrates by a molecular beam method. The film itself as well as the interface between the film and substrate exhibits few defects since the lattice constants of the film and substrate are substantially identical, thus making the films particularly useful as optical waveguides with reduced light scattering centers, or as nonlinear optical devices in which phase matching is readily accomplished by controlling the thickness of the film.