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Evidence for Subsurface Atomic Displacements of the GaAs(110) Surface from LEED/CMTA Analysis.

机译：LEED / CmTa分析表明Gaas（110）表面的亚表面原子位移的证据。

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The low-energy electron diffraction constant momentum transfer average (LEED/CMTA) technique is applied to the GaAs(110) surface. In addition to verifying our earlier model of the top layer atomic displacements, atomic displacements in the first subsurface layer, opposite in direction to those in the top layer, are suggested. Best estimates for atomic positions in the surface and first subsurface layers are given. (Author)

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Kahn, A.; Cisneros, G.; Bonn, M.; Mark, P.; Duke, C. B.;
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年度 1977
页码 1-12
总页数 12
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium arsenides; Surface analysis; Electron transitions; Momentum transfer; Electron diffraction; Low energy; Reprints; Low energy electron diffraction;

机译：砷化镓;表面分析;电子跃迁;动量转移;电子衍射;低能;重印;低能电子衍射;

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1. Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers [J] . T. O. Strandberg, C. M. Canali, A. H. MacDonald Physical review . 2009,第2期

机译：（110）GaAs表面和亚表面层中替代Mn的磁性
2. Local Tunneling Barrier Height at and around Subsurface Dopant Sites on p-GaAs(110) [J] . Kengo Kobayashi, Shu Kurokawa, Shigehiko Hasegawa, Japanese journal of applied physics . 2010,第10期

机译：p-GaAs（110）上地下掺杂位点及其周围的局部隧穿势垒高度
3. Scanning Tunneling Microscopy and Barrier-Height Imaging of Subsurface Dopants on GaAs(110) [J] . Kengo Kobayashi, Shu Kurokawa, Akira Sakai Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第12期

机译：GaAs（110）上的地下掺杂物的扫描隧道显微镜和势垒高度成像
4. Exceptional Bulk Waves on 110 and 111 Surfaces of GaAs Evidenced by Brillouin Spectroscopy [C] . Gladkevitch, A.V., Aleksandrov, . 2001

机译：布里渊光谱证明的GaAs 110和111表面上的异常体波
5. Surface Chemistry and Interface Evolution during the Atomic Layer Deposition of High-k Metal Oxides on InAs(100) and GaAs(100) Surfaces. [D] . Henegar, Alex J. 2015

机译：在InAs（100）和GaAs（100）表面上高k金属氧化物原子层沉积过程中的表面化学和界面演化。
6. Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study [O] . Tun-Wen Pi, Hsiao-Yu Lin, Ya-Ting Liu, 2013

机译：富GaAs（001）-4×6和As富GaAs（001）-2×4表面上三甲基铝原子层沉积的原子-原子相互作用：同步辐射辐射光发射研究
7. Reconstruction and subsurface lattice distortions in the (2 × 1)O-Ni(110) structure: A LEED analysis [O] . Kleinle Gerald, Wintterlin Joost, Ertl Gerhard, 1990

机译：（2×1）O-Ni（110）结构中的重建和次表面晶格畸变：LEED分析
8. Subsurface Atomic Displacements at the GaAs(110) Surface. [R] . Kahn, A., So, E., Mark, P., 1977

机译：Gaas（110）表面的次表面原子位移。

Evidence for Subsurface Atomic Displacements of the GaAs(110) Surface from LEED/CMTA Analysis.

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