Ion-Implanted n- and p-type Layers in InP.

摘要

InP has been doped by implantation with several different ions to yield layers of both n- and p-type conductivity. Se(+) and Si(+) were found to be efficient n-type dopants with activations in excess of 75% for moderate doses (10 to the 14th power/sq.cm. at 400 keV). At doses of 10 to the 15th power/sq.cm., sheet resistivities as low as 15 omega/cm/cm were obtained. Cd(+), Mg(+), and Be(+) were all acceptors, with Mg(+) yielding a sheet hole concentration as high as 5 x 10 to the 13th power/sq.cm. for a dose of 10 to the 14th power/sq.cm. at 150 keV. Reproducible annealing of implanted samples at temperatures up to 750 C was accomplished with a pyrolytic phosphosilicate glass (PSG) encapsulation. Implants of Kr(+) indicate that residual implantation damage is n type. (Author)