Process for producing microcrystalline, n- or p-type silicon layers using the glow discharge plasma technique, suitable for solar cells

摘要

In order to improve the layer properties of microcrystalline n- or p-type conductivity silicon layers (n-Si:H) or (p-Si:H), and to reduce the HF output, the process gas (1) consisting of silane, hydrogen and phosphine or diborane is admixed with argon during the deposition in the capacitively excited plasma (2, 4, 5, 6, 7, 9). The process is employed in the fabrication of thin-film tandem solar cells of the type: glass-transparent, conductive electrode/p-i-n semiconductor body 1/p-i-n semiconductor body 2/metal electrode. IMAGE