RF PLASMA EFFECT ON AMORPHOUS THIN ION-IMPLANTED LAYERS OF N- AND P-TYPE GERMANIUM: RAMAN AND AFM RESEARCH

摘要

Effect of RF plasma treatment (RFPT) and rapid thermal annealing (RTA) on high-dose implanted n-type and p-type amorphous Ge layers has been studied by Raman scattering spectroscopy and AFM techniques. To recrystallize the amorph-ous thin n-Ge layer implanted by BF2+ ions needed higher RTA temperatures and power density of RFPA than in the case of p-Ge implanted by P+ ions with a same dose. It was shown that the RFPT resulted in recrystallization of amorphous Ge layers at considerably lower temperatures than RTA, that it was associated with nonthermal effects. Low-energy ion and electron bom-bardment during RFPT resulted in formation of nanostructured Ge surface.