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The Transport of Electrons in Quantized Inversion and Accumulation Layers in III-V Compounds.

机译：III-V族化合物中量子化反转和积累层中电子的迁移。

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作者
Ferry, D. K.;
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年度 1978
页码 1-11
总页数 11
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Electron transport; Metal oxide semiconductors; Group III compounds; Group V compounds; Reprints; Quantum mechanics;

机译：电子传输;金属氧化物半导体; III类化合物; V族化合物;重印;量子力学;

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1. Characterization of inversion and accumulation layer electron transport in 4H and 6H-SiC MOSFETs on implanted P-type regions [J] . Vathulya V.R., White M.H. IEEE Transactions on Electron Devices . 2000,第11期

机译：在注入的P型区域上的4H和6H-SiC MOSFET中反转和累积层电子传输的表征
2. Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers [J] . P.D.C. King, T.D. Veal, C.F. McConville, Physical review letters . 2010,第25期

机译：量化电子累积层中的带隙变窄
3. Nonparabolic coupled Poisson-Schrodinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces [J] . P. D. C. King, T. D. Veal, C. F. McConville Physical review . 2008,第12期

机译：量子电子累积层的非抛物线耦合Poisson-Schrodinger解：InN表面的能带弯曲，电荷分布和子带
4. MODELING OF CARRIER TRANSPORT AND QUANTUM MECHANICAL EFFECTS IN MOS INVERSION AND ACCUMULATION LAYERS [C] . International symposium on ultralarge scale integration science and technology . 1997

机译：MOS反转和积累层中载波运输和量子力学效应的建模
5. A study of electron transport in the inversion layer of advanced silicon carbide power MOSFETs. [D] . Zeng, Yu (Anne). 2004

机译：对高级碳化硅功率MOSFET的反型层中电子传输的研究。
6. Evidence for Layered Quantized Transport in Dirac Semimetal ZrTe5 [O] . Wei Wang, Xiaoqian Zhang, Huanfeng Xu, -1

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7. Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor [O] . Ya-Chin King 2012

机译：绝缘体上金属场效应晶体管中反型层量化的小信号电子电荷质心模型
8. Magneto Transport and Magneto Optical Characteristics of Inversion and Accumulation Layers [R] . Ong, N. P., Madhukar, A. 1982

机译：反转和累积层的磁传输和磁光特性

The Transport of Electrons in Quantized Inversion and Accumulation Layers in III-V Compounds.

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