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X-Ray Lithography at Approximately 100 A Linewidths Using X-Ray Masks Fabricated by Shadowing Techniques

机译：使用阴影技术制作的X射线掩模在大约100 a线宽下进行X射线光刻

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作者
Flanders, D. C.;
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年度 1979
页码 p.1-6
总页数 6
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Photolithography; Masks; Fabrication; Deposition; Membranes; X rays; Absorbers(Materials); Reprints;

机译：光刻;掩模;制造;沉积;膜; X射线;吸收剂（材料）;重印;

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专利

1. DEEP ETCH X-RAY LITHOGRAPHY USING SILICON-GOLD MASKS FABRICATED BY DEEP ETCH UV LITHOGRAPHY AND ELECTROFORMING [J] . Ballandras S., Basrour S., Robert L., Journal of Micromechanics and Microengineering . 1995,第3期

机译：深硅X-射线光刻技术，采用深金UV光刻技术和电铸技术制造的硅金面膜
2. Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography [J] . LI Yi-Gui, YANG Chun-Sheng, LIU Jing-Quan, 中国物理快报：英文版 . 2011,第003期

机译：通过掩模拖动X射线光刻和对准X射线光刻技术制造聚合物微针阵列
3. Validation of X-Ray Lithography and Development Simulation System for Moving Mask Deep X-Ray Lithography [J] . Yoshikazu Hirai, Sadik Hafizovic, Naoki Matsuzuka, Journal of Microelectromechanical Systems . 2006,第1期

机译：移动掩模深X射线光刻的X射线光刻验证与开发仿真系统
4. X-ray mask metrology: the development of linewidth standards for x-ray lithography [C] . Michael T. Postek, National Institute of Standards, Technology, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III . 1993

机译：X射线掩模计量学：X射线光刻线宽标准的发展
5. A comparison of three X-ray emission techniques with applications to thin film and bulk samples including low energy heavy-ion particle-induced X-ray emission spectroscopy. [D] . Streib, Kenneth Lee. 2003

机译：比较了三种X射线发射技术及其在薄膜和块状样品上的应用，包括低能重离子粒子诱导的X射线发射光谱。
6. X-Ray Lithography Mask Metrology: Use of Transmitted Electrons in an SEM for Linewidth Measurement [O] . Michael T. Postek, Jeremiah R. Lowney, Andras E. Vladar, 1993

机译：X射线光刻掩模计量学：透射电子在SEM中用于线宽测量
7. Soft X-ray varied-line-spacing gratings fabricated by near-field holography using an electron beam lithography-written phase mask [O] . Dakui Lin, Zhengkun Liu, Kay Dietrich, 2019

机译：使用电子束光刻写入相掩模，由近场全息术制造的软X射线变化线间隙
8. X-Ray Lithography for sub-100-nm-Channel-Length Transistors Using Masks Fabricated with Conventional Photolithography, Anisotropic Etching, and Oblique Shadowing [R] . Chou, S. Y., Smith, H. I., Antoniadis, D. A. 1985

机译：用于亚100nm通道长度晶体管的X射线光刻技术，采用常规光刻，各向异性蚀刻和斜阴影制作的掩模

X-Ray Lithography at Approximately 100 A Linewidths Using X-Ray Masks Fabricated by Shadowing Techniques

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