DEEP ETCH X-RAY LITHOGRAPHY USING SILICON-GOLD MASKS FABRICATED BY DEEP ETCH UV LITHOGRAPHY AND ELECTROFORMING

摘要

This paper is devoted to the description of a low cost microfabrication process far the realization of deep etch x-ray lithography (DEXRL) masks. These masks are composed of a 15 mu m thick silicon membrane supporting gold absorbers which are typically 12 to 16 mu m thick. The resolution of such masks is limited to 2-4 mu m, but they allow irradiation up to 2 mm of polymethylmethacrylate (PMMA) by using hard x-ray synchrotron radiation. Theoretical results about dosimetric parameters for the PMMA irradiation are presented. Results obtained with these masks are also given. The purpose of this study is the realization of low cost micromechanical components using the LIGA technique. [References: 11]