Research on Microwave Junction Gate Field Effect Transistors

摘要

This program has considered basic problems in the fabrication of junction-gate FET devices. We have shown that Ga(x)In(1-x)As layers can be grown of the appropriate composition (x = 0.468 + or - 3%) required to obtain a good lattice match to indium phosphide substrates. Additionally, techniques have been developed for in-situ etch of substrates prior to epitaxial growth. Diffusion and masking techniques have been developed for making junctions with no enhanced lateral diffusion. These diffusions are carried out in the absence of an arsenic overpressure, and are limited to n-type layers at the present time. (Author)