Floating Gate Junction-Less Double Gate Radiation Sensitive Field Effect Transistor (RADFET) Dosimeter: A Simulation Study

摘要

In this paper, a floating gate Junction-less Double Gate radiation sensitive field effect transistor has been investigated in order to observe the impact of gamma radiation without applying any gate bias in pre-radiation state. Gamma radiation model of Sentaurus 3D device simulator has been used to simulate the trapping de-trapping of the electron-hole pair due the gamma radiation. The change in the electrical characteristics due to the floating gate geometry has been explained in the paper.