首页> 外国专利> METHOD OF MONITORING RADIATION USING A FLOATING GATE FIELD EFFECT TRANSISTOR DOSIMETER, AND DOSIMETER FOR USE THEREIN

METHOD OF MONITORING RADIATION USING A FLOATING GATE FIELD EFFECT TRANSISTOR DOSIMETER, AND DOSIMETER FOR USE THEREIN

机译:用浮栅场效应晶体管剂量计监测辐射的方法及其所用的剂量计

摘要

An insulated gate field effect transistor dosimeter has a source and drain defin ing a channel region, a floating gate having a first portion extending over the chan nel region, and a second, larger portion extending away from said region, a control gate hav ing at least a portion thereof overlapping a first part of the floating gate, and a cha rging gate overlapping a second part of the floating gate. The area of the second part of t he floating gate is much smaller than the area of the first part, and the charging gate is separated from the channel region by the control gate. The dosimeter is charged, before irradiation, by connecting the source, drain and control gate to a common ground and applying a potential difference between the charging gate and the common ground. The charge is supplied to the floating gate by a path which does not require a signi ficant electric stress to be created in the region of the gate oxide and the channel. T he dosimeter may comprise two such transistors fabricated on a common substrate, conveniently with a common source. The pair of transistors may be charged by maintaining the sources, drains and control gates within the normal maximum oper ating voltage relative to each other, and applying different potential differences bet ween the two charging gates, respectively, and the substrate. Following irradiation, the absorbed radiation does is determined by measuring the difference between the threshold v oltages of the two transistors. Preferably, the transistors have charges of opposite pol arities. This differential arrangement reduces the effects of temperature variations and enhances sensitivity.
机译:绝缘栅场效应晶体管剂量计具有限定沟道区的源极和漏极,具有在沟道区上方延伸的第一部分和远离所述区域延伸的第二较大部分的浮栅,控制栅位于其至少一部分与浮置栅极的第一部分重叠,而a回栅极与浮置栅极的第二部分重叠。浮置栅极的第二部分的面积比第一部分的面积小得多,并且充电栅极通过控制栅极与沟道区分开。辐射前,通过将源极,漏极和控制栅极连接到公共接地并对剂量计充电,并在充电栅极和公共接地之间施加电势差。电荷通过不需要在栅极氧化物和沟道区域中产生明显电应力的路径提供给浮栅。剂量计可包括两个这样的晶体管,该两个晶体管在公共衬底上制造,方便地具有公共源。可以通过将源极,漏极和控制栅极相对于彼此维持在正常最大工作电压内,并且在两个充电栅极与基板之间分别施加不同的电势差来对晶体管进行充电。辐照之后,通过测量两个晶体管的阈值电压之间的差异来确定吸收的辐射确实。优选地,晶体管具有相反极性的电荷。这种差分布置减少了温度变化的影响并提高了灵敏度。

著录项

  • 公开/公告号CA2215369A1

    专利类型

  • 公开/公告日1999-03-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号CA19972215369

  • 发明设计人

    申请日1997-09-12

  • 分类号G01T1/02;H01L31/119;

  • 国家 CA

  • 入库时间 2022-08-22 02:24:03

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