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METHOD OF MONITORING RADIATION USING A FLOATING GATE FIELD EFFECT TRANSISTOR DOSIMETER, AND DOSIMETER FOR USE THEREIN
METHOD OF MONITORING RADIATION USING A FLOATING GATE FIELD EFFECT TRANSISTOR DOSIMETER, AND DOSIMETER FOR USE THEREIN
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机译:用浮栅场效应晶体管剂量计监测辐射的方法及其所用的剂量计
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摘要
An insulated gate field effect transistor dosimeter has a source and drain defin ing a channel region, a floating gate having a first portion extending over the chan nel region, and a second, larger portion extending away from said region, a control gate hav ing at least a portion thereof overlapping a first part of the floating gate, and a cha rging gate overlapping a second part of the floating gate. The area of the second part of t he floating gate is much smaller than the area of the first part, and the charging gate is separated from the channel region by the control gate. The dosimeter is charged, before irradiation, by connecting the source, drain and control gate to a common ground and applying a potential difference between the charging gate and the common ground. The charge is supplied to the floating gate by a path which does not require a signi ficant electric stress to be created in the region of the gate oxide and the channel. T he dosimeter may comprise two such transistors fabricated on a common substrate, conveniently with a common source. The pair of transistors may be charged by maintaining the sources, drains and control gates within the normal maximum oper ating voltage relative to each other, and applying different potential differences bet ween the two charging gates, respectively, and the substrate. Following irradiation, the absorbed radiation does is determined by measuring the difference between the threshold v oltages of the two transistors. Preferably, the transistors have charges of opposite pol arities. This differential arrangement reduces the effects of temperature variations and enhances sensitivity.
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