The authors' replies to the discussion on ????????Measurements of junction-transistor noise in the frequency range 7-50 kc/s????????, ????????A germanium diffused-junction photo-electric cell????????, ????????Transistor power amplifiers????????, ????????Transistor d.c. convertors???????? and ????????Noise in silicon microwave diodes????????

Nicoll G.R.; Stephenson W.L.; Waddell J.M.; Mayer S.E.; Kaye S.; Hilbourne R.A.; Jones D.D.; Light L.H.; Hooker P.M.

首页> 外文期刊>Proceedings of the IEE - Part B: Radio and Electronic Engineering >The authors' replies to the discussion on ????????Measurements of junction-transistor noise in the frequency range 7-50 kc/s????????, ????????A germanium diffused-junction photo-electric cell????????, ????????Transistor power amplifiers????????, ????????Transistor d.c. convertors???????? and ????????Noise in silicon microwave diodes????????

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The authors' replies to the discussion on ????????Measurements of junction-transistor noise in the frequency range 7-50 kc/s????????, ????????A germanium diffused-junction photo-electric cell????????, ????????Transistor power amplifiers????????, ????????Transistor d.c. convertors???????? and ????????Noise in silicon microwave diodes????????

机译：作者对有关在频率范围为7-50 kc / s的结型晶体管噪声的测量的讨论作出了答复。锗扩散结光电电池晶体管功率放大器晶体管直流转换器????????硅微波二极管中的噪声

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《Proceedings of the IEE - Part B: Radio and Electronic Engineering》 |1955年第6期|共3页
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Nicoll G.R.; Stephenson W.L.; Waddell J.M.; Mayer S.E.; Kaye S.; Hilbourne R.A.; Jones D.D.; Light L.H.; Hooker P.M.;
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1. Discussion on ????????Measurements of junction-transistor noise in the frequency range 7-50 kc/s????????, ????????A germanium diffused-junction photo-electric cell????????, ????????Transistor power amplifiers????????, ????????Transistor d.c. convertors???????? and ????????Noise in silicon microwave diodes???????? before a joint meeting of the Radio and Measurements Sections, 11th May, 1955 [J] . Proceedings of the IEE - Part B: Radio and Electronic Engineering . 1955,第6期

机译：关于在7-50 kc / s频率范围内测量结型晶体管噪声的讨论?????????，锗扩散结光电二极管，电池?????????，?????????晶体管功率放大器?????????，????????晶体管dc转换器????????硅微波二极管中的噪声在1955年5月11日的无线电和测量部门的联席会议之前
2. Measurements of junction-transistor noise in the frequency range 7-50 kc/s [J] . Stephenson W.L. Proceedings of the IEE - Part B: Radio and Electronic Engineering . 1955,第6期

机译：在7-50 kc / s频率范围内测量结型晶体管噪声
3. The authors' replies to the discussion on ????????Junction-transistor bootstrap linear-sweep circuits????????, ????????Design considerations of junction-transistor oscillators for the conversion of power from direct to alternating current???????? and ????????Minority-carrier storage in semi-conductor diodes???????? [J] . Nambiar K.P.P., Boothroyd A.R., Oakes F., Proceedings of the IEE - Part B: Radio and Electronic Engineering . 1957,第15期

机译：作者对有关结型晶体管自举线性扫描电路的讨论的答复，以及结型晶体管振荡器的设计考虑因素。功率从直流到交流的转换半导体载流子中的少数载流子存储
4. Low -frequency noise in silicon -germanium hetero-junction bipolar transistor BiCMOS technology. [D] . Jin, Zhenrong. 2004

机译：硅锗异质结双极晶体管BiCMOS技术中的低频噪声。
5. Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers [O] . Bruce, SPO, Vandamme, LKJ Lodewijk = Lode, Rydberg, A Anders 1999

机译：使用跨阻放大器测量SiGe异质结双极晶体管中的低频基极和集电极电流噪声和相干性
6. Measurements of the Low Frequency Noise Properties of a 30 GHz High-Electron-Mobility-Transistor Amplifier [R] . Jarosik, Norman, Page, Lyman, Wilkinson, David, 1993

机译：30 GHz高电子迁移率晶体管放大器的低频噪声特性测量

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