INSULATED GATE BIPOLAR TRANSISTOR DEVICE COMPRISING AN INSULATED GATE FIELD EFFECT TRANSISTOR CONNECTED IN SERIES WITH A JUNCTION FIELD EFFECT TRANSISTOR HAVING A MODIFIED DRAIN CONTACT

摘要

An insulated gate bipolar transistor device in which a first insulated gate field effect transistor (1) is connected in series with a second field effect transistor, FET (2), wherein the second field effect transistor (2) has a modified drain contact region (16) of opposite conductivity to the pocket (11) surrounding it, and has a heavily doped source contact region (16A) which is electrically connected to a heavily doped drain contact region (161) of the first insulated gate field effect transistor, and further that the breakthrough voltage of the first insulated gate field effect transistor (1) is higher than the pinch voltage, Vp, of the second field effect transistor (2).