Charge Storage, Retention and Endurance in MNOS Devices

摘要

The steady state current through the double dielectric of MNOS capacitors on p-silicon substrate was measured as function of temperature for several fixed fields in the silicon oxide of a polarity promoting hole flow from the silicon. It is shown that the availability of empty recipient trap states for holes tunneling from the silicon into the nitride controls the current. The occupancy of these trap states is governed by Frenkel-Poole detrapping at elevated temperatures and by Fowler-Nordheim tunnel emission from the traps at low temperature. Transient charging measurements support this interpretation. (Author)