Atomic Layer Deposition of Platinum Nano-particles and High-k Dielectrics for Non-volatile Charge Storage Memory Devices.

摘要

Demand for portable non-volatile electronic memory has been the driving force behind scaling on non-volatile charge storage memory for decades. As devices continue to be aggressively scaled current technologies reach their limit of effectiveness. The use of metal nano-particles as a charge storage layer in non-volatile memory devices is a possible solution to extend the scaling of non-volatile memories; however, effective, scalable CMOS compatible nano-particle fabrication techniques are not widely available. The fabrication of metal nano-particle memory devices for application in charge storage non-volatile memory devices is discussed. A new method to grow Pt nano-particle by atomic layer deposition is developed and analyzed. The dependence of Pt nano-particle formation on growth conditions is explored, and the Pt nano-particles grown show good thermal stability as studied by rapid thermal annealing transmission electron microscopy studies in-situ.;A CMOS memory capacitor process was developed using an all ALD process with Pt nano-particles and high-kappa blocking oxides being formed in-situ. Electrical characteristics of memory devices show clear memory effects with charge storage being split between the high-kappa layer and the Pt nano-particle layer. Pt nano-particles are shown to enhance the memory behavior of the memory capacitors and their use in future memory devices is promising.