Nonvolatile Memory Effects of NiO Layers Embedded in Al2O3 High-k Dielectrics Using Atomic Layer Deposition

摘要

Nonvolatile memory effects of Al2O3/NiO/Al2O3 nanolaminates deposited through atomic layer deposition were investigated. The memory structure was constructed without interruption in the order of Al2O3/NiO/Al2O3 thin-film deposition on Si wafers. The memory characteristics were analyzed through high frequency capacitance-voltage measurement along with high resolution images of the aforementioned nanolaminates. The defective nature of nickel oxide produces a significantly large memory window; the largest memory window observed was 13.8 V. The peculiar memory characteristics were understood in terms of the constituent tunnel and charge-trapping layers in the metal gate/high-k oxide/semiconducting oxide/high-k oxide/Si memory structures.