Selective deposition of high-k dielectric on a semiconductor surface, using atomic layer deposition, deposits the material on a specific surface zone in a number of cycles

摘要

For the selective deposition of a layer (4) of HfO 2 or Al 2O 3 on the surface (OF) of a silicon semiconductor substrate (1), using atomic layer deposition (ALD), the surface zones (2,3) are prepared differently using a photo varnish mask. In the first zone (2), the layer is deposited on a layer (6) of SiO 2 by ALD in a 4-20 cycles and preferably 10 cycles. The second zone (3) carries islands (5) of coating material.