Retention Behaviour of MNOS Memory Devices with Embedded Si or Ge Nanocrystals – Computer Simulation

摘要

The charge retention behaviour of MNOS structures with embedded Si or Ge nanocrystals are studied by computer simulation. It is obtained that the oxide thickness and the location of nanocrystlas affect the retention behaviour very strongly. The retention time changes from a few ms to several years.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35385